Silicon films of thickness near and below one micrometer play a central role in many advanced technologies for computation and energy conversion. Numerous data on the thermal conductivity of silicon thin films are available in the literature, but mainly for the in-plane thermal conductivity of polycrystalline and single-crystal films. Here we use picosecond time-domain thermoreflectance (TDTR), transmission electron microscopy, and phonon transport theory to investigate heat conduction normal to polycrystalline silicon films on diamond substrates. The data agree with predictions that account for the coupled effects of phonon scattering on film boundaries and defects concentrated near grain boundaries. Using the data and the model, we estimate the polysilicon-diamond interface resistance to be 6.5–8 m2 K GW−1.
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ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
December 11–14, 2013
Hong Kong, China
Conference Sponsors:
- Heat Transfer Division
ISBN:
978-0-7918-5615-4
PROCEEDINGS PAPER
Phonon Conduction Normal to Polysilicon Films on Diamond
Jungwan Cho,
Jungwan Cho
Stanford University, Stanford, CA
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Mehdi Asheghi,
Mehdi Asheghi
Stanford University, Stanford, CA
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Kenneth E. Goodson
Kenneth E. Goodson
Stanford University, Stanford, CA
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Jungwan Cho
Stanford University, Stanford, CA
Pane C. Chao
BAE Systems, Nashua, NH
Mehdi Asheghi
Stanford University, Stanford, CA
Kenneth E. Goodson
Stanford University, Stanford, CA
Paper No:
MNHMT2013-22171, V001T03A008; 7 pages
Published Online:
February 26, 2014
Citation
Cho, J, Chao, PC, Asheghi, M, & Goodson, KE. "Phonon Conduction Normal to Polysilicon Films on Diamond." Proceedings of the ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer. Hong Kong, China. December 11–14, 2013. V001T03A008. ASME. https://doi.org/10.1115/MNHMT2013-22171
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