Thermal stress in silicon chips encapsulated in IC plastic packages is discussed. A stress-sensing chip which can detect the three-dimensional stress components separately is developed. Thermal stress occurs in the silicon chip almost linearly with temperature at the steady state. The stress path with temperature during heating is the same as that during cooling. On the other hand, during temperature cycling, stress hysteresis is observed, and the stress increases gradually with increasing cycles. The stress increase phenomenon occurs due to the viscoelastic phenomenon of the molding compounds. The stress-increase ratio is determined by the relationship between the cycle period and the stress relaxation time of the molding compounds at temperatures of interest.
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March 1993
Research Papers
Thermal Stress Measurement in Silicon Chips Encapsulated in IC Plastic Packages Under Temperature Cycling
Hideo Miura,
Hideo Miura
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
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Makoto Kitano,
Makoto Kitano
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
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Asao Nishimura,
Asao Nishimura
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
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Sueo Kawai
Sueo Kawai
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
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Hideo Miura
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
Makoto Kitano
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
Asao Nishimura
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
Sueo Kawai
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki, Japan
J. Electron. Packag. Mar 1993, 115(1): 9-15 (7 pages)
Published Online: March 1, 1993
Article history
Revised:
January 1, 1993
Online:
April 28, 2008
Citation
Miura, H., Kitano, M., Nishimura, A., and Kawai, S. (March 1, 1993). "Thermal Stress Measurement in Silicon Chips Encapsulated in IC Plastic Packages Under Temperature Cycling." ASME. J. Electron. Packag. March 1993; 115(1): 9–15. https://doi.org/10.1115/1.2909307
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