Electromigration Reliability With Respect to Cu Weight Contents of Sn–Ag–Cu Flip-Chip Solder Joints Under Comparatively Low Current Stressing

This work presents electromigration reliability and patterns of Sn–3Ag–0.5Cu and $Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu$ composite flip-chip solder joints with $Ti∕Ni(V)∕Cu$ under bump metallurgy (UBM), bonded on $Au∕Ni∕Cu$ substrate pads. The solder joints were subjected to an average current density of $5kA∕cm2$ under an ambient temperature of $150°C$⁠. Under the situation when electron charges flow from the UBM toward the substrate, Sn diffuses from the Cu–Ni–Sn intermetallic compound developed around the UBM toward the UBM and eventually causes the Ni(V) layer to deform. Electromigration reliability of $Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu$ composite flip-chip solder joints was found to be better than that of Sn–3Ag–0.5Cu solder joints. According to the morphological observations on cross-sectioned solder joints, a failure mechanism is proposed as follows. Since the deformation of the Ni(V) layer as a result of Sn diffusion toward the UBM is considered as the dominant failure, a greater Cu weight content in the solder joints would trap more Sn in the Sn–Cu interfacial reaction and would therefore retard the diffusion of Sn toward the UBM and hence enhance the electromigration reliability.