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Keywords: III-VI semiconductors
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Journal Articles

Interface Shape and Thermally-Driven Convection in Vertical Bridgman Growth of Gallium Selenide: A Semiconductor With Anisotropic Solid-Phase Thermal Conductivity

Hanjie Lee, Postdoctoral Research Associate, Arne J. Pearlstein, Mem. ASME, Professor of Mechanical Engineering
Journal: ASME Journal of Heat and Mass Transfer
Publisher: ASME
Article Type: Technical Papers
J. Heat Mass Transfer. August 2001, 123(4): 729–740.
https://doi.org/10.1115/1.1372194
Published Online: February 2, 2001
... Transfer Division for publication in the JOURNAL OF HEAT TRANSFER . Manuscript received by the Heat Transfer Division August 29, 2000; revision received February 2, 2001. Associate Editor: C. Beckermann. 29 August 2000 02 February 2001 gallium compounds III-VI semiconductors crystal...
View Article titled, Interface Shape and Thermally-Driven Convection in Vertical Bridgman Growth of Gallium Selenide: A Semiconductor With Anisotropic Solid-Phase Thermal Conductivity
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Topics: Anisotropy, Flow (Dynamics), Heating, Semiconductors (Materials), Shapes, Temperature, Temperature distribution, Thermal conductivity, Melting, Solidification